Triethoxysilane → Vinyltriethoxysilane

반응식

[SiH4].[CH2:2]([O:4][SiH](OCC)OCC)[CH3:3].[CH2:12]([O:14][Si:15]([O:31][CH2:32][CH3:33])([O:28][CH2:29][CH3:30])[CH2:16][CH2:17][Si:18]([O:25][CH2:26][CH3:27])([O:22][CH2:23][CH3:24])[O:19][CH2:20][CH3:21])[CH3:13]>>[CH:16]([Si:15]([O:28][CH2:29][CH3:30])([O:14][CH2:12][CH3:13])[O:31][CH2:32][CH3:33])=[CH2:17].[CH2:2]([O:4][Si:18]([O:19][CH2:20][CH3:21])([O:22][CH2:23][CH3:24])[O:25][CH2:26][CH3:27])[CH3:3]

참가 물질

반응물 3

HCID 13830Triethoxysilane

HCID 23953Silane

HCID 85266Bis(triethoxysilyl)ethane

생성물 2

HCID 6516Vinyltriethoxysilane수율 25%

HCID 6517Tetraethoxysilane

실험 절차

The reaction was carried out in accordance with the procedure of Comparative Example 2, except that the silane used was triethoxysilane and the reaction temperature was 150° C. The reaction was monitored by GPC and was completed in one hour. The major product formed was 1,2-bis(triethoxysilyl)ethane (72%), with vinyltriethoxysilane (25%) and tetraethoxysilane also being formed (3%). With a primary alkyl silane and at lower reaction temperatures, the undesired bis(silyl)ethane was the main reaction product.