Silicon carbide → Silicon Carbide Silicon Nitride
반응식
[C-:1]#[Si+:2].[N:3]12[Si:8]34[N:9]5[Si:6]61[N:7]3[Si:4]25[N:5]64>>[C-:1]#[Si+:2].[N:3]12[Si:8]34[N:9]5[Si:6]61[N:7]3[Si:4]25[N:5]64참가 물질
3
실험 절차
The solid polymeric thermoset of Example 4 was heated under a flow (110 cc/min) of nitrogen at 3° C./min to 1200° C. and held at this temperature for 1 min followed by heating at 1° C./min to 1415° C. and holding at this temperature for 1 hr and heating at 1° C./min to 1450° C. and holding for 1.5 hr. XRD analysis showed the formation of pure silicon carbide and silicon nitride nanoparticles/nanostructures, which are embedded in an excess amount of silicon. The silicon nitride nanoparticles/nanostructures were formed mainly on the exterior part or outer surface of the sample, which was exposed to the nitrogen. The silicon carbide nanoparticles/nanostructures were mainly formed on the interior portion of the sample.
후처리
- temperatureThe solid polymeric thermoset of Example 4 was heated under a flow (110 cc/min) of nitrogen at 3° C./min to 1200° C.
- temperatureby heating at 1° C./min to 1415° C.
- waitholding at this temperature for 1 hr
- temperatureheating at 1° C./min to 1450° C.
- waitholding for 1.5 hr
출처 및 근거
- ORD 기록
- ord-dd84094ab1b94b32b7ea0b4eb671237e
- 출처 데이터셋
- uspto-grants-2015_06
- 특허 번호
- US09045374B2
반응 노트
불러오는 중…