Mesitylene → Anthracene

HRID 217548

반응식

HRID 217548 반응식
C1(C)C=C(C)C=C(C)C=1.C([C:12]1[C:25]2[C:16](=[CH:17][C:18]3[C:23]([CH:24]=2)=[CH:22][CH:21]=[CH:20][CH:19]=3)[CH:15]=[CH:14][CH:13]=1)=C.C1(C=O)C2C(=CC3C(C=2)=CC=CC=3)C=CC=1>>[CH:15]1[C:16]2[C:25](=[CH:24][C:23]3[C:18]([CH:17]=2)=[CH:19][CH:20]=[CH:21][CH:22]=3)[CH:12]=[CH:13][CH:14]=1

참가 물질

4

반응물 3

HCID 7947MesityleneHCID 35864Anthracenecarboxaldehyde2회HCID 139070581-Vinylanthracene2회

생성물 1

HCID 8418Anthracene

반응 조건

온도
150 °C

실험 절차

Approximately 10 mmol mesitylene solution of vinylanthracene (VA) or anthraldehyde (AnA) was put in a round bottom flask and bubbled with nitrogen or argon gas for at least 30 min. A piece of the H-terminated silicon substrate was then immersed in the solution and allowed to react with VA or AnA for about 12 h under reflux at about 150° C. in an oil bath. During the reaction, the solution was also purged with nitrogen (or argon) to eliminate dissolved oxygen and to prevent the substrate from being oxidized. After the reaction, the substrate derivatized with VA or AnA was rinsed with dichloromethane, acetonitrile and methanol, and dried under a stream of nitrogen gas. The derivatization of the H-terminated surface with anthracene moieties as described in Example 3 is illustrated in FIG. 6.

후처리

  1. custombubbled with nitrogen or argon gas for at least 30 min
  2. customto react with VA or AnA for about 12 h
  3. customDuring the reaction
  4. customthe solution was also purged with nitrogen (or argon)
  5. dissolutionto eliminate dissolved oxygen
  6. customAfter the reaction
  7. washwas rinsed with dichloromethane, acetonitrile and methanol
  8. customdried under a stream of nitrogen gas

출처 및 근거

ORD 기록
ord-f58781bb35a2402ab83b7ad0e71ac9f1
출처 데이터셋
uspto-grants-2012_06
특허 번호
US08197650B2

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