Dichlorodimethylsilane → di(1H-inden-1-yl)dimethylsilane

HRID 2379300

반응식

HRID 2379300 반응식
[CH:1]1([Li])[C:9]2[C:4](=[CH:5][CH:6]=[CH:7][CH:8]=2)[CH:3]=[CH:2]1.[CH2:11]1[C:19]2[C:14](=[CH:15][CH:16]=[CH:17][CH:18]=2)[CH:13]=[CH:12]1.C([Li])CCC.[CH3:25][Si:26]([CH3:29])(Cl)Cl>>[CH3:25][Si:26]([CH3:29])([CH:11]1[C:19]2[C:14](=[CH:15][CH:16]=[CH:17][CH:18]=2)[CH:13]=[CH:12]1)[CH:1]1[C:9]2[C:4](=[CH:5][CH:6]=[CH:7][CH:8]=2)[CH:3]=[CH:2]1

참가 물질

5

반응물 4

HCID 6398DichlorodimethylsilaneHCID 7219IndeneHCID 178418339ButyllithiumHCID 178506815HCID 178506815, 화합물

생성물 1

HCID 599429di(1H-inden-1-yl)dimethylsilane수율 71%

실험 절차

In detail, in Japanese Patent Laid-Open Publication No. 221285/1990 for example, a solution of an indenyl lithium salt prepared from indene and n-butyllithium is slowly added to a dimethyldichlorosilane solution, and they are reacted with each other overnight to obtain dimethyldi(1-indenyl)silane in a 71% yield. In Japanese Patent Laid-Open Publication No. 268307/1992, dimethyldi (2-methyl-1-indenyl) silane is obtained in a 16% yield in a manner similar to the above.

후처리

  1. customare reacted with each other overnight

출처 및 근거

ORD 기록
ord-ce9b78dae72b4ddc992262c705339d43
출처 데이터셋
uspto-grants-1994_11
특허 번호
US05360921

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