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Tris(2-methoxyethoxy)vinylsilane → Tetraethoxysilane

HRID 352642
노트
인쇄 미리보기

반응식

HRID 352642 반응식
[Si:1]([O:14][CH2:15][CH2:16]C)([O:10][CH2:11][CH2:12]C)([O:6][CH2:7][CH2:8]C)[O:2][CH2:3][CH2:4]C.[Si](OC(C)C)(OC(C)C)(OC(C)C)OC(C)C.[Si](OCCOC)(OCCOC)(OCCOC)OCCOC.C[Si](OC)(OC)OC.C=C[Si](OC)(OC)OC.C[Si](OCCOC)(OCCOC)OCCOC.ClC[Si](OCC)(OCC)OCC.C=C[Si](OCCOC)(OCCOC)OCCOC>>[Si:1]([O:6][CH2:7][CH3:8])([O:10][CH2:11][CH3:12])([O:14][CH2:15][CH3:16])[O:2][CH2:3][CH3:4]
참가 물질실험 절차출처 및 근거반응 노트

참가 물질

9

반응물 8

HCID 14025Tris(2-methoxyethoxy)vinylsilaneHCID 14456MethyltrimethoxysilaneHCID 69627TetrapropoxysilaneHCID 74813TetraisopropoxysilaneHCID 75087Tetra(methoxyethoxy)silaneHCID 76004VinyltrimethoxysilaneHCID 84858Silane, (chloromethyl)triethoxy-

실험 절차

Si(O-n-C3H7)4; Si(O—isoC3H7)4; Si(OC2H4OCH3)4; CH3Si(OCH3)3; CH2═CHSi(OCH3)3; CH3Si(OC2H4OCH3)3; ClCH2Si(OC2H5)3; CH2═CHSi(OC2H4OCH3)3.

출처 및 근거

ORD 기록
ord-6b41455068514db7bd1f8f6d1bbc4e5f
출처 데이터셋
uspto-grants-2004_06
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US06747079B2

반응 노트

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이 페이지에서참가 물질실험 절차출처 및 근거반응 노트
HCID 87392
2,5,7,10-Tetraoxa-6-silaundecane, 6-(2-methoxyethoxy)-6-methyl-

생성물 1

HCID 6517Tetraethoxysilane