Silicon carbide → Methane

HRID 366986

반응식

HRID 366986 반응식
[N:1]12[Si:6]34[N:7]5[Si:4]61[N:5]3[Si:2]25[N:3]64.[C-:8]#[Si+:9]>[O-2].[Y+3].[O-2].[O-2].[Y+3].C(O)C>[N:1]12[Si:6]34[N:7]5[Si:4]61[N:5]3[Si:2]25[N:3]64.[C-:8]#[Si+:9].[CH4:8]

참가 물질

7

반응물 2

HCID 9863Silicon carbide2회HCID 3084099Trisilicon tetranitride3회

생성물 3

HCID 297MethaneHCID 9863Silicon carbideHCID 3084099Trisilicon tetranitride

시약·촉매·용매 2

HCID 159374Yttrium oxide촉매HCID 702Ethanol용매

실험 절차

644 g of a silicon nitride powder (SN-E10 manufactured by Ube Industries, Ltd.; average particle size: 0.3 μm), 276 g of a silicon carbide (beta random ultrafine grade manufactured by Ibiden Co., Ltd.; average particle size: 0.27 μm), 80 g of an yttrium oxide powder (manufactured by Nippon Yttrium Co., Ltd.; average particle size: 1.4 μm) and 1000 g of ethanol as the dispersion medium were blended under pulverizing in a ball mill for 18 hours using 800 g of silicon nitride balls as a tumbling media. The resultant mixture was dried to obtain a starting ceramic powder mixture having a BET specific surface area of 12.1 m2 /g. The above amounts, 644 g of silicon nitride and 276 g of silicon carbide, correspond to theoretical amounts of silicon nitride and silicon carbide formed from 578.6 g of silicon and 82.9 g of carbon black used in Example 1.

후처리

  1. dry with materialThe resultant mixture was dried
  2. customto obtain a starting ceramic powder mixture

출처 및 근거

ORD 기록
ord-32798f81733e4199a14a2cd19bf989ae
출처 데이터셋
uspto-grants-2000_10
특허 번호
US06133180

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