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Hydrogen Bromide → Methyl 2-(2,6-Dipropyl-4-Bromomethyl-Phenoxy)Phenylacetate

HRID 37239
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HRID 37239 반응식
[CH2:1]([C:4]1[CH:21]=[C:20]([CH2:22]O)[CH:19]=[C:18]([CH2:24][CH2:25][CH3:26])[C:5]=1[O:6][C:7]1[CH:12]=[CH:11][CH:10]=[CH:9][C:8]=1[CH2:13][C:14]([O:16][CH3:17])=[O:15])[CH2:2][CH3:3].P(Br)(Br)[Br:28].Br>C(Cl)(Cl)(Cl)Cl>[CH2:1]([C:4]1[CH:21]=[C:20]([CH2:22][Br:28])[CH:19]=[C:18]([CH2:24][CH2:25][CH3:26])[C:5]=1[O:6][C:7]1[CH:12]=[CH:11][CH:10]=[CH:9][C:8]=1[CH2:13][C:14]([O:16][CH3:17])=[O:15])[CH2:2][CH3:3]
참가 물질실험 절차후처리출처 및 근거반응 노트

참가 물질

5

반응물 3

HCID 260Hydrogen BromideHCID 24614Phosphorus tribromideHCID 19934855HCID 19934855, 화합물

생성물 1

HCID 19934848Methyl 2-(2,6-Dipropyl-4-Bromomethyl-Phenoxy)Phenylacetate

시약·촉매·용매 1

HCID 5943Carbon Tetrachloride용매

실험 절차

To a solution of 2.66.1 g (7.46 mmol) of the product of Step A dissolved in 15 mL of carbon tetrachloride was added 0.709 mL (7.47 mmol) of phosphorous tribromide and the reaction mixture was magnetically stirred at room temperature for 30 min as hydrogen bromide was evolved. The magnetic stir bar was removed, and the reaction mixture was concentrated in vacuo. The residue was redissolved and evaporated from carbon tetrachloride several times to remove most of the hydrogen bromide. Finally, the residue was purified by rapid flash chromatography on a silica gel column eluted with 10% EtOAc-hexane. Combination and evaporation of the purified fractions and drying in vacuo afforded 2.129 (68%) of the title compound which was used directly in the next step without further characterization.

후처리

  1. customThe magnetic stir bar was removed
  2. concentrationthe reaction mixture was concentrated in vacuo
  3. dissolutionThe residue was redissolved
  4. customevaporated from carbon tetrachloride several times
  5. customto remove most of the hydrogen bromide
  6. customFinally, the residue was purified by rapid flash chromatography on a silica gel column
  7. washeluted with 10% EtOAc-hexane
  8. customCombination and evaporation of the purified fractions
  9. customdrying in vacuo

출처 및 근거

ORD 기록
ord-daa34a8c96b44fc1ac20a4442935256e
출처 데이터셋
uspto-grants-1995_05
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US05420133

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