반응식
[N:1]12[Si:6]34[N:7]5[Si:4]61[N:5]3[Si:2]25[N:3]64.[Si:8](=O)=O>>[N:1]12[Si:6]34[N:7]5[Si:4]61[N:5]3[Si:2]25[N:3]64.[SiH4:8].[NH3:1]참가 물질
5
실험 절차
Next, a middle silicon nitride layer 12 is deposited onto the first layer 10 of silicon dioxide previously deposited. Silicon nitride is produced from the reaction of silane (SiH4) with nitrogen and ammonia (NH3). The nitride deposition is performed, for example, in a "pancake style"]reactor. Typically, 3.5 minutes is required to deposit 500 Angstroms of Si3N4 at 800° C.
출처 및 근거
- ORD 기록
- ord-6f007f246b7a4bd4a4b23dffc3c83d94
- 출처 데이터셋
- uspto-grants-1977_10
- 특허 번호
- US04052251
연결된 노트
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