Silica → Ammonia

반응식

[N:1]12[Si:6]34[N:7]5[Si:4]61[N:5]3[Si:2]25[N:3]64.[Si:8](=O)=O>>[N:1]12[Si:6]34[N:7]5[Si:4]61[N:5]3[Si:2]25[N:3]64.[SiH4:8].[NH3:1]

참가 물질

반응물 2

HCID 24261Silica

HCID 3084099Trisilicon tetranitride

생성물 3

HCID 222Ammonia

HCID 23953Silane

HCID 3084099Trisilicon tetranitride

실험 절차

Next, a middle silicon nitride layer 12 is deposited onto the first layer 10 of silicon dioxide previously deposited. Silicon nitride is produced from the reaction of silane (SiH4) with nitrogen and ammonia (NH3). The nitride deposition is performed, for example, in a "pancake style"]reactor. Typically, 3.5 minutes is required to deposit 500 Angstroms of Si3N4 at 800° C.