Tetraethoxysilane → Triethoxysilane

HRID 2229865Notes

Reaction equation

[H-].[Na+].[CH2:3]([O:5][Si:6](OCC)([O:10][CH2:11][CH3:12])[O:7][CH2:8][CH3:9])[CH3:4]>>[CH2:3]([O:5][SiH:6]([O:10][CH2:11][CH3:12])[O:7][CH2:8][CH3:9])[CH3:4]

Participants

Reactant 2

HCID 6517Tetraethoxysilane

HCID 24758Sodium hydride

Product 1

HCID 13830Triethoxysilane

Procedure

The procedure in Example 1 was used with the following modifications: the metal hydride was sodium hydride [95% purity; 1.0 grams (g); 39.6 millimole (mmol)]; tetraethoxysilane (0.5 ml/h; 2.4 mmol/h); the carrier gas was argon (1 ml/min). Reaction was carried out at a fixed temperature of 250° C. Results of percent triethoxysilane produced (HSi(OEt)3) can be seen in Table 6.

Workup

customReaction
customwas carried out at a fixed temperature of 250° C

Sources & evidence

ORD record: ord-8b0dd37af8754d3c920d2e8aef5b6f13
Source dataset: uspto-grants-2002_07
DOI: 10.6084/m9.figshare.5104873.v1
Patent number: US06420585B1

Reaction notes

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