Chlorotrimethylsilane → HCID 22337994, compound

HRID 585767Notes

Reaction equation

HRID 585767 reaction equation
C([Li])[CH2:2][CH2:3][CH3:4].[CH:6]([NH:9][CH:10](C)C)(C)C.[CH3:13][Si:14](Cl)([CH3:16])[CH3:15].[CH2:18]1COCC1>>[CH3:6][N:9]([CH3:10])[C:13]([Si:14]([CH3:16])([CH3:18])[CH3:15])=[C:3]([CH3:2])[CH3:4]

Participants

5

Reactant 4

HCID 6397ChlorotrimethylsilaneHCID 7912DiisopropylamineHCID 8028TetrahydrofuranHCID 178418339Butyllithium

Product 1

HCID 22337994HCID 22337994, compound

Procedure

294 ml (0.45 ml) of butyllithium is added in drops at −35° C. under inert gas to 0.43 mol of diisopropylamine in 300 ml of THF. Then, 50 g (0.434 mol) of N,N-dimethyl-2-methylpropinoic acid amide is added in drops at 0° C. and stirred for 30 minutes at this temperature. Then, 60.3 ml (0.47 mol) of trimethylsilyl chloride is added at −35° C. and stirred for two more hours. The solvent is distilled off in a rotary evaporator. The residue is distilled in a vacuum at 65-69° C./30 mbar.

Workup

  1. stirringstirred for two more hours
  2. distillationThe solvent is distilled off in a rotary evaporator
  3. distillationThe residue is distilled in a vacuum at 65-69° C./30 mbar

Sources & evidence

ORD record
ord-eae479571c294c3999a95c5dbc12c1d7
Source dataset
uspto-grants-2005_08
Patent number
US06933385B2

Reaction notes

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