三甲基氯硅烷 → 31469-20-2

HRID 1663403笔记

反应方程式

HRID 1663403 反应方程式
C([Li])CCC.C(NC(C)C)(C)C.[CH:13]1([C:17]([O:19][CH2:20][CH3:21])=[O:18])[CH2:16][CH2:15][CH2:14]1.Cl[Si:23]([CH3:26])([CH3:25])[CH3:24]>C1COCC1.CCCCCC>[C:13]1(=[C:17]([O:19][CH2:20][CH3:21])[O:18][Si:23]([CH3:26])([CH3:25])[CH3:24])[CH2:16][CH2:15][CH2:14]1

参与物

7

反应物 4

HCID 6397三甲基氯硅烷HCID 7912DiisopropylamineHCID 84700环丁烷甲酸乙酯HCID 178418339正丁基锂

产物 1

HCID 6723291331469-20-2

试剂、催化剂与溶剂 2

HCID 8028四氢呋喃溶剂2 次HCID 8058正己烷溶剂

反应条件

温度
-78 °C

实验过程

A 1.6 M hexane solution of n-butyllithium (2.72 mL, 4.34 mmol) was added to a solution of diisopropylamine (440 mg, 4.34 mmol) in THF (6 mL) at −78° C. over 5 minutes. The resultant solution was warmed to 0° C. for 30 min and cooled to −78° C. A solution of ethyl cyclobutanecarboxylate (464 mg, 3.62 mmol) in THF (1 mL) was added dropwise. The mixture was stirred at −78° C. for 30 min. Chlorotrimethylsilane (0.597 mL, 4.71 mmol) was added. The mixture was warmed to room temperature over 1 h, quenched with saturated NaHCO3 (5 mL), diluted with diethyl ether (200 mL), washed with water (20 mL), brine (20 mL), dried (MgSO4) and concentrated to give (cyclobutylidene(ethoxy)methoxy)trimethylsilane, which was taken to next step without further purification.

后处理

  1. temperatureThe mixture was warmed to room temperature over 1 h
  2. customquenched with saturated NaHCO3 (5 mL)
  3. additiondiluted with diethyl ether (200 mL)
  4. washwashed with water (20 mL), brine (20 mL)
  5. dry with materialdried (MgSO4)
  6. concentrationconcentrated

来源与证据

ORD记录
ord-d68c8351833d41c0859f69ebb0fbb679
来源数据集
uspto-grants-2011_10
专利号
US08034940B2

反应笔记

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