Triethoxysilane → Vinyltriethoxysilane

HRID 1380160

反応式

HRID 1380160 の反応式
[SiH4].[CH2:2]([O:4][SiH](OCC)OCC)[CH3:3].[CH2:12]([O:14][Si:15]([O:31][CH2:32][CH3:33])([O:28][CH2:29][CH3:30])[CH2:16][CH2:17][Si:18]([O:25][CH2:26][CH3:27])([O:22][CH2:23][CH3:24])[O:19][CH2:20][CH3:21])[CH3:13]>>[CH:16]([Si:15]([O:28][CH2:29][CH3:30])([O:14][CH2:12][CH3:13])[O:31][CH2:32][CH3:33])=[CH2:17].[CH2:2]([O:4][Si:18]([O:19][CH2:20][CH3:21])([O:22][CH2:23][CH3:24])[O:25][CH2:26][CH3:27])[CH3:3]

参加物

5

反応物 3

HCID 13830TriethoxysilaneHCID 23953SilaneHCID 85266Bis(triethoxysilyl)ethane

生成物 2

HCID 6516Vinyltriethoxysilane収率 25%HCID 6517Tetraethoxysilane

実験手順

The reaction was carried out in accordance with the procedure of Comparative Example 2, except that the silane used was triethoxysilane and the reaction temperature was 150° C. The reaction was monitored by GPC and was completed in one hour. The major product formed was 1,2-bis(triethoxysilyl)ethane (72%), with vinyltriethoxysilane (25%) and tetraethoxysilane also being formed (3%). With a primary alkyl silane and at lower reaction temperatures, the undesired bis(silyl)ethane was the main reaction product.

後処理

  1. customwas 150° C
  2. customThe major product formed

出典と根拠

ORDレコード
ord-b6b83ade960f4b93a0072cd9f6b2af6c
出典データセット
uspto-grants-1986_04
特許番号
US04579965

関連ノート

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