Vinyltriethoxysilane → Bis(triethoxysilyl)ethane

HRID 1380161

반응식

HRID 1380161 반응식
[CH2:1]([O:3][SiH:4]([O:8][CH2:9][CH3:10])[O:5][CH2:6][CH3:7])[CH3:2].[SiH4].[CH:12]([Si:14]([O:21][CH2:22][CH3:23])([O:18][CH2:19][CH3:20])[O:15][CH2:16][CH3:17])=[CH2:13]>>[CH2:1]([O:3][Si:4]([O:8][CH2:9][CH3:10])([O:5][CH2:6][CH3:7])[CH2:13][CH2:12][Si:14]([O:15][CH2:16][CH3:17])([O:18][CH2:19][CH3:20])[O:21][CH2:22][CH3:23])[CH3:2].[CH2:1]([O:3][Si:4]([O:15][CH2:16][CH3:17])([O:8][CH2:9][CH3:10])[O:5][CH2:6][CH3:7])[CH3:2]

참가 물질

5

반응물 3

HCID 6516VinyltriethoxysilaneHCID 13830TriethoxysilaneHCID 23953Silane

생성물 2

HCID 6517Tetraethoxysilane수율 8%HCID 85266Bis(triethoxysilyl)ethane수율 13%

실험 절차

The reaction was carried out as in Comparative Example 5, except that triethoxysilane was used as the starting silane. The reaction as monitored by GPC and was complete in two hours. Vinyltriethoxysilane (79%) was the major product formed and significant amounts of 1,2-bis(triethoxysilyl)ethane (13%) and tetraethoxysilane (8%) by-products, were also formed.

후처리

  1. customThe reaction
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출처 및 근거

ORD 기록
ord-b889258576cb498ebab08629d176de5f
출처 데이터셋
uspto-grants-1986_04
특허 번호
US04579965

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