Hydrogen Peroxide → N-(tert-Buloxycarbonyl)-3,4-dihydroxy-L-phenylalanine

HRID 2266925

반응식

HRID 2266925 반응식
N12[Si]34N5[Si]61N3[Si]25N64.[O:8]=O.S(=O)(=O)(O)O.OO.NCCC[Si]([O:26][CH3:27])(OC)OC.P([O-])([O-])([O-])=O.[Na+].[Na+].[Na+].[O:36]=[C:37]([C@H:39]([CH2:41][C:42]1[CH:49]=[C:47]([OH:48])[C:45]([OH:46])=[CH:44][CH:43]=1)[NH2:40])[OH:38].[C:50]1([CH3:56])[CH:55]=CC=C[CH:51]=1>C(Cl)(Cl)Cl>[C:27]([NH:40][C@@H:39]([CH2:41][C:42]1[CH:49]=[C:47]([OH:48])[C:45]([OH:46])=[CH:44][CH:43]=1)[C:37]([OH:38])=[O:36])([O:26][C:50]([CH3:56])([CH3:55])[CH3:51])=[O:8]

참가 물질

10

실험 절차

Before the surface modification of silicon nitride (Si3N4) tips, cleaning procedures were performed using O2 plasma (name of a machine) for 3 min and subsequently they were transferred to a piranha solution (sulfuric acid:H2O2=8:2) for 30 min. They moved to 20% (v/v) 3-aminopropyltrimethoxysilane in toluene to be functionalized with amines for 30 to 60 min after rinsing with H2O. Two polyethylene glycol (PEG) derivatives were chosen for PEGylation on the AFM tips: mPEG-N-hydroxy succinimide (NHS) (Mw 2000) and Fmoc-PEG-NHS (Mw 3400) (Nektar Inc.). Mixture (Fmoc-PEG-NHS:mPEGNHS=1:5-10, 5 mM) of PEGs were prepared in 50 mM sodium phosphate buffer, 0.6 M K2SO4, pH 7.8 and chloroform. PEGylation reactions were conducted sequentially first in a sodium phosphate buffer at 40° C. and subsequently in chloroform for 3 hrs in each step. The reason to use PEG mixture is to prevent multiple DOPA binding on TiO2. Fmoc-PEG-NHS provides an amine for Boc-DOPA conjugation after Fmoc cleavage.Piperidine (20% v/v in NMP) was used to deprotect Fmoc for 5 min and subsequently cantilevers were transferred to BOP/HOBt/DOPA (a molar ratio of 1:1:1, final 8 mM in NMP) solution with 10 μL DIPEA. The same procedure was used for Tyrosine modification.

후처리

  1. customfor 3 min
  2. washafter rinsing with H2O
  3. customMixture (Fmoc-PEG-NHS:mPEGNHS=1:5-10, 5 mM) of PEGs were prepared in 50 mM sodium phosphate buffer

출처 및 근거

ORD 기록
ord-c4c117ee435f42918ba4a51c3dd4c0b1
출처 데이터셋
uspto-grants-2010_12
특허 번호
US07858679B2

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