Triethylsilane → HCID 59557762, compound

HRID 1175283Notes

Reaction equation

HRID 1175283 reaction equation
[SiH](CC)(CC)CC.[Br:8][C:9]1[CH:10]=[CH:11][C:12]([Cl:27])=[C:13]([C:15]([C:17]2[CH:22]=[CH:21][C:20]([CH2:23][CH2:24][CH2:25][Br:26])=[CH:19][CH:18]=2)=O)[CH:14]=1.C(S(O)(=O)=O)(F)(F)F>C(O)(C(F)(F)F)=O>[Br:8][C:9]1[CH:10]=[CH:11][C:12]([Cl:27])=[C:13]([CH2:15][C:17]2[CH:22]=[CH:21][C:20]([CH2:23][CH2:24][CH2:25][Br:26])=[CH:19][CH:18]=2)[CH:14]=1

Participants

5

Conditions

Temperature
50 °C

Procedure

To a stirred solution of Et3SiH (1.4 mL, 8.50 mmol) and (5-bromo-2-chlorophenyl)(4-(3-bromopropyl)phenyl)methanone (2.36 g, 5.67 mmol) in TFA (10 mL) at 30° C. was added CF3SO3H (0.05 mL). Within a few minutes the temperature of the solution increased causing it to reflux violently. After stirring for 2.5 h, additional Et3SiH (0.45 mL, 2.85 mmol) was added and the mixture was heated to 50° C. After stirring for 4.5 h the reaction was complete, and the volatiles were removed under reduced pressure. The residue was poured into brine and extracted 3× with ethyl acetate. The combined organic layers were washed 3× with water, 2× with aqueous Na2CO3 and 2× with brine, and dried over Na2SO4. The solvent was evaporated under reduced pressure, and the residue (2.3 g) was used in the next step without further purification.

Workup

  1. temperatureWithin a few minutes the temperature of the solution increased
  2. temperatureto reflux violently
  3. stirringAfter stirring for 4.5 h the reaction
  4. customthe volatiles were removed under reduced pressure
  5. additionThe residue was poured into brine
  6. extractionextracted 3× with ethyl acetate
  7. washThe combined organic layers were washed 3× with water, 2× with aqueous Na2CO3 and 2× with brine
  8. dry with materialdried over Na2SO4
  9. customThe solvent was evaporated under reduced pressure
  10. customthe residue (2.3 g) was used in the next step without further purification

Sources & evidence

ORD record
ord-c62f906c7c614114982f3b57fffb19ad
Source dataset
uspto-grants-2010_11
Patent number
US07838499B2

Reaction notes

Loading…