Trifluoroacetic acid → HCID 21706317, compound
Reaction equation
Cl.C[O:3][C:4](=O)[CH2:5][O:6][C:7]1[CH:37]=[CH:36][C:10]([C:11]([C:13]2[C:14]3[CH:35]=[CH:34][CH:33]=[CH:32][C:15]=3[S:16][C:17]=2[C:18]2[CH:23]=[CH:22][C:21]([O:24][CH2:25][CH2:26][N:27]3[CH2:31][CH2:30][CH2:29][CH2:28]3)=[CH:20][CH:19]=2)=O)=[CH:9][CH:8]=1.[H-].[H-].[H-].[H-].[Li+].[Al+3].C([SiH](CC)CC)C.C(O)(C(F)(F)F)=O>C1COCC1.ClCCl>[OH:3][CH2:4][CH2:5][O:6][C:7]1[CH:8]=[CH:9][C:10]([CH2:11][C:13]2[C:14]3[CH:35]=[CH:34][CH:33]=[CH:32][C:15]=3[S:16][C:17]=2[C:18]2[CH:19]=[CH:20][C:21]([O:24][CH2:25][CH2:26][N:27]3[CH2:31][CH2:30][CH2:29][CH2:28]3)=[CH:22][CH:23]=2)=[CH:36][CH:37]=1Participants
Procedure
To the product (1 g, 1.94 mmol) of Example 28 dissolved in anhydrous THF (80 mL) was added LAH (0.47 g, 12.4 mmol) at 0-5° C. under nitrogen. The reaction mixture was stirred for 2 hours and quenched with ice-cold NaOH (0.5 M) solution. The organic layer was extracted with ethyl acetate, combined, dried and concentrated in vacuo. To this residue (0.88 g, 1.8 mmol) dissolved in dichloromethane (˜50 mL) was added triethylsilane (1.73 mL, 10.8 mmol) and TFA (0.42 mL, 5.4 mmol). The reaction mixture was stirred for 1.5 hours before it was washed with dilute NaOH solution and brine until neutral. The combined organic layers were dried with Na2SO4 and concentrated. The residue was purified by column chromatography (20% CH3OH in dichloromethane) to yield 0.53 g (63%) of title compound.
Workup
- customquenched with ice-cold NaOH (0.5 M) solution
- extractionThe organic layer was extracted with ethyl acetate
- customdried
- concentrationconcentrated in vacuo
- stirringThe reaction mixture was stirred for 1.5 hours before it
- washwas washed with dilute NaOH solution and brine until neutral
- dry with materialThe combined organic layers were dried with Na2SO4
- concentrationconcentrated
- customThe residue was purified by column chromatography (20% CH3OH in dichloromethane)
Sources & evidence
- ORD record
- ord-23befca2a5ec4464b55a2e9df8cc63c2
- Source dataset
- uspto-grants-2001_09
- Patent number
- US06284756B1
Reaction notes
Loading…