Butyl bromide → HCID 20264427, compound

HRID 463637Notes

Reaction equation

HRID 463637 reaction equation
Br[CH2:2][CH2:3][CH2:4][CH3:5].[Mg].C(N(CC)CC)C.[CH2:14]([C:19]12[CH2:26][CH2:25][C:22]([C:27]([O:29]C)=O)([CH2:23][CH2:24]1)[CH2:21][CH2:20]2)[CH2:15][CH2:16][CH2:17][CH3:18]>C1C=CC=CC=1.C1COCC1>[C:27]([C:22]12[CH2:21][CH2:20][C:19]([CH2:14][CH2:15][CH2:16][CH2:17][CH3:18])([CH2:24][CH2:23]1)[CH2:26][CH2:25]2)(=[O:29])[CH2:2][CH2:3][CH2:4][CH3:5]

Participants

7

Procedure

1-Bromobutane (10.45 g, 0.076 mol) in dry benzene (9 ml) was added dropwise to magnesium (1.68 g, 0.069 mol) in dry benzene (3 ml) and dry THF (9.98 g) during 75 min. The reaction mixture was stirred at room temperature for 1 h. Triethylamine (28.84 g, 0.285 mol) was added at 5°-10° C. and methyl 4-n-pentylbicyclo(2,2,2)octane-1-carboxylate (3.00 g, 0.013 mol) in dry benzene (27 ml) was added dropwise during 1 h at 5°-15° C. The ice bath was removed and the reaction mixture was left stirring at room temperature for 4 h, and the progress of the reaction was followed by glc until the ester peak had almost disappeared. The reaction mixture was diluted with water and the organic layer was washed with 4N-hydrochloric acid (3×50 ml). The aqueous layer was washed with ether (3×50 ml) and the ether layers were combined with the organic layer and washed with water (3×50 ml) and dried (MgSO4). The ether was removed and the residue dried in vacuo and used directly to make the required compound.

Workup

  1. customThe ice bath was removed
  2. waitthe reaction mixture was left
  3. stirringstirring at room temperature for 4 h
  4. additionThe reaction mixture was diluted with water
  5. washthe organic layer was washed with 4N-hydrochloric acid (3×50 ml)
  6. washThe aqueous layer was washed with ether (3×50 ml)
  7. washwashed with water (3×50 ml)
  8. dry with materialdried (MgSO4)
  9. customThe ether was removed
  10. customthe residue dried in vacuo

Sources & evidence

ORD record
ord-a2fc96f919d849709b8c95ea4499ff36
Source dataset
uspto-grants-1985_10
Patent number
US04544497

Reaction notes

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